Near‐Stoichiometric Silicon Carbide from an Economical Polysilane Precursor

Authors

Dietmar Seyferth, Massachusetts Institute of Technology
Timothy G. Wood, Massachusetts Institute of Technology
Henry J. Tracy PhD, University of Southern Maine
Jennifer L. Robison, Massachusetts Institute of Technology

Document Type

Article

Publication Date

5-1992

Publication Title

Journal of the American Ceramic Society

Keywords

Journal of the American Ceramic Society

Abstract

Na condensation of CH3SiHCl2 gives polysilanes of the type ((CH3SiH)x (CH3Si)y )n (where x +y = 1) whose pyrolysis in a stream of Ar gives SiC and a substantial amount of elemental Si. Treatment of such polysilanes with catalytic quantities of group‐IV‐metal–organometallic complexes, ((η‐C5H5)2ZrH2)n , (η‐C5H5)2Zr(CH3)2, (η‐C5H5)2ZrHCl, and (η‐C5H5)2‐Ti(CH3)2, results in cross‐linking processes such that pyrolysis of these polysilanes gives close to stoichiometric SiC (≥95 wt %) and only very little elemental Si.

Comments

Copyright © 2020 The American Ceramic Society, all rights reserved

S. M. Wiederhorn–contributing editor

Supported by the Air Force Office of Scientific Research.

Recommended Citation

Seyferth, D., Wood, T. G., Tracy, H. J., & Robison, J. L. (1992). Near‐stoichiometric silicon carbide from an economical polysilane precursor. Journal of the American Ceramic Society. 75(5), 1300-1302. doi.org/10.1111/j.1151-2916.1992.tb05578.x